ABSTRACT
A simple and efficient quantum-mechanical model for simulation of modern nanoscale devices is presented. The model was used for quantitative calculations of quantum currents in nanoscale electronic devices. Specifically, we used it to simulate the tunnelling current in the test structure, direct and reverse tunnel currents through the tunnel junction, Schottky contact, etc. The model has been implemented successfully within the drift-diffusion approach of our NanoTCAD simulator. We provided a series of simulations and compared them with published data, experimental measurements and other complicated models, including the Wigner function method, quantum Boltzmann transport models, and others.