Third M.I.T. Conference on Computational Fluid and Solid Mechanics June 14–17, 2005  

Efficient quantum-mechanical model based on drift-diffusion approach for simulations of modern nanoscale devices

A. Fedoseyeva, A. Przekwasa, M. Turowskia, M.S. Wartakb,*
aCFD Research Corporation, 215 Wynn Drive, Huntsville, Alabama 35805, USA bDepartment of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5, Canada

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A simple and efficient quantum-mechanical model for simulation of modern nanoscale devices is presented. The model was used for quantitative calculations of quantum currents in nanoscale electronic devices. Specifically, we used it to simulate the tunnelling current in the test structure, direct and reverse tunnel currents through the tunnel junction, Schottky contact, etc. The model has been implemented successfully within the drift-diffusion approach of our NanoTCAD simulator. We provided a series of simulations and compared them with published data, experimental measurements and other complicated models, including the Wigner function method, quantum Boltzmann transport models, and others.

Keywords:  Simulations; Nanoscale devices; Drift-diffusion; Tunnelling

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